2004. 4. 20 1/2 semiconductor technical data kdv300e revision no : 0 tv tuning. features h high capacitance ratio : c 2v /c 25v =14.5(min.) h low series resistance : r s =1.1 ? (max.) h small package : esc. maximum rating (ta=25 ? ) esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e 1. anode 2. cathode f 0.13 0.05 f + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode type name marking c v characteristic symbol rating unit reverse voltage v r 32 v junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =30v - - 10 na i r2 v r =30v, ta=60 ? - - 100 capacitance c 2v v r =2v, f=1mhz 39.5 - 47.4 pf c 25v v r =25v, f=1mhz 2.60 - 3.03 capacitance ratio c 2v /c 25v - 14.5 - - series resistance r s v r =5v, f=470mhz - - 1.1 ? c(max.)-c(min.) " 0.02 c(min.) (v r =2~25v) note : available in matched group for capacitance to 2.0%.
2004. 4. 20 2/2 revision no : 0 kdv300e 10 reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 10 40 30 20 total capacitance c (pf) reverse voltage v (v) r tr c - v f=1mhz f=470mhz s series resistance r ( ? ) reverse voltage v (v) r sr r - v -12 10 -11 10 -13 10 -9 10 -10 -1.5 10 0.5 1 reverse voltage v (v) r tr r ? (log c ) / ? (log v ) - v tr ? (log c ) / ? (log v ) 30 -1.0 -0.5 0 0 10 0.5 1 30 20 40 10 30 50 60 0 10 0.5 1 30 0.4 0.8 0.2 0.6 1.0 1.2
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